Improvement of High-Temperature Stability of Al2O3/Pt/ZnO/Al2O3 Film Electrode for SAW Devices by Using Al2O3 Barrier Layer
نویسندگان
چکیده
In order to develop film electrodes for the surface acoustic wave (SAW) devices operating in harsh high-temperature environments, novel Al₂O₃/Pt/ZnO/Al₂O₃ multilayered film electrodes were prepared by laser molecular beam epitaxy (LMBE) at 150 °C. The first Al₂O₃ layer was used as a barrier layer to prevent the diffusion of Ga, La, and Si atoms from the La₃Ga₅SiO14 (LGS) substrate to the film electrode and thus improved the crystalline quality of ZnO and Pt films. It was found that the resistance of the Al₂O₃/Pt/ZnO/Al₂O₃ electrode did not vary up to a temperature of 1150 °C, suggesting a high reliability of electrode under harsh high-temperature environments. The mechanism of the stable resistance of the Al₂O₃/Pt/ZnO/Al₂O₃ film electrodes at high temperature was investigated by analyzing its microstructure. The proposed Al₂O₃/Pt/ZnO/Al₂O₃ film electrode has great potential for application in high-temperature SAW devices.
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